|
Vth.ba (V) |
Vth.aa (V) |
Vfb.ba (V) |
Vfb.aa (V) |
Qss/q.ba |
Qss/q.aa |
d |
|
|
A0/B0 |
0.2 |
0.3 |
-0.8 |
-0.7 |
2.6 |
5.1 |
840 |
|
A1 |
0.5 |
0.48 |
-0.7 |
-0.7 |
4.1 |
4.1 |
1070 |
|
A2 |
0.54 |
0.56 |
-0.65 |
-0.65 |
5 |
5.1 |
1077 |
|
A3 |
0.52 |
0.51 |
-0.65 |
-0.65 |
5 |
4.8 |
1089 |
CV parameters of run.1, ba=after anneal, aa=after room temperature anneal.
|
Vth.ba (V) |
Vth.aa (V) |
Vfb.ba (V) |
Vfb.aa (V) |
Qss/q.ba |
Qss/q.aa |
d |
|
|
Cns |
0.5 |
- |
-0.25 |
- |
- |
- |
205 |
|
Cs |
0.09 |
- |
-0.45 |
- |
41 |
- |
70 |
CV parameters run.2, ba=after anneal, aa=after room temperature anneal.
|
Vth.ba (V) |
Vth.aa (V) |
Vfb.ba (V) |
Vfb.aa (V) |
Qss/q.ba |
Qss/q.aa |
d |
|
|
B0/A0 |
0.2 |
0.3 |
-0.8 |
-0.7 |
2.6 |
5.1 |
840 |
|
B1 |
0.18 |
0.16 |
-0.85 |
-0.85 |
1.4 |
1.5 |
790 |
|
B2 |
0.22 |
0.13 |
-0.85 |
-0.85 |
1.6 |
1.5 |
770 |
|
B3 |
0.18 |
0.17 |
-0.85 |
-0.85 |
1.5 |
1.5 |
785 |
|
B4 |
0.07 |
0.02 |
-0.95 |
-1 |
1.1 |
2.5 |
780 |
|
B5 |
0.045 |
-0.036 |
-0.95 |
-1 |
1.3 |
2.8 |
750 |
|
B6 |
0.2 |
0.11 |
-0.85 |
-0.9 |
1.6 |
0.09 |
770 |
CV parameters of run.3, ba=after anneal, aa=after encapsulation in PECVD SiON, Fe sputtering and anneal.
|
Vth.ba (V) |
Vth.aa (V) |
Vfb.ba (V) |
Vfb.aa (V) |
Qss/q.ba |
Qss/q.aa |
d |
|
|
Cns |
0.51 |
0.51 |
-0.75 |
-0.75 |
3.1 |
2.9 |
1100 |
|
Cs |
0.28 |
0.28 |
-0.95 |
-0.95 |
0.77 |
0.77 |
1095 |
CV parameters of Elmrabat Fluor experiment, ba=after anneal, aa=after room temperature anneal
Vth: Threshold voltage, Vfb: Flat-band voltage, Qss/q: total charge in semiconductor; d: Oxide thickness